a p2761r-a-hf advanced power n-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss 650v fast switching characteristic r ds(on) 1 simple drive requirement i d 10a rohs compliant description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 drain current, v gs @ 10v a i d @t c =100 drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ i ar avalanche current 2 a t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 1.2 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data & specifications subject to change without notice 201501162 linear derating factor 0.8 10 4.4 storage temperature range -55 to 150 18 104 rating 650 + 30 halogen-free product 1 -55 to 150 parameter 10 parameter g d s g d s to-262(r) a p2761 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-262 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as dc/dc converters. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 650 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.6 - v/ r ds(on) static drain-source on-resistance 3 v gs =10v, i d =3.5a - - 1 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =3.5a - 4.5 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =480v , v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge 3 i d =10a - 53 85 nc q gs gate-source charge v ds =520v - 10 - nc q gd gate-drain ("miller") charge v gs =10v - 15 - nc t d(on) turn-on delay time 3 v dd =320v - 16 - ns t r rise time i d =10a - 20 - ns t d(off) turn-off delay time r g =10 -82- ns t f fall time v gs =10v - 36 - ns c iss input capacitance v gs =0v - 2750 4430 pf c oss output capacitance v ds =15v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =10a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =10a, v gs =0v, - 610 - ns q rr reverse recovery charge di/dt=100a/s - 8.64 - c notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=1.2mh , r g =25 3.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. reliability, function or design. 2 apec reserves the right to make changes without further notice to any products herein to improve AP2761R-A-HF .
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP2761R-A-HF 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =3.5a v g =10v 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss 0 4 8 12 16 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 0 2 4 6 8 10 0 4 8 121620242832 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 0 2 4 6 8 10 0.1 0.3 0.5 0.7 0.9 1.1 1.3 v sd , source-to-drain voltage (v) i s (a) t j = 25 o c t j = 150 o c 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) .
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP2761R-A-HF 0 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0 1000 2000 3000 4000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 4 8 12 16 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =330v v ds =410v v ds =520v .
AP2761R-A-HF marking information 5 part numbe r package code option 2761r ywwsss a date code (ywwsss) y last digit of the year ww week sss sequence .
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